Nao Al Farabi Kazakh National University 1
1. Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering
2. Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering
3. Effects of thermal and laser annealing on the structure of Ge2Sb2Te5 thin films
1