Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering
Tolepov Z. Prikhodko O. Kolobov A. Ismailova G. Peshaya S. Guseinov N. Mukhametkarimov Y. Kapanov A. Maksimova S.
15 October 2024Elsevier B.V.
Journal of Non-Crystalline Solids
2024#642
Ge2Sb2Te5 (GST) films are widely used in non-volatile phase-change memory devices, their properties can be fine-tuned by element doping. In this work, current-voltage (I-V) characteristics of the switching process and the structure of phase-change GST films doped with Bi concentration from 0 to 9.2 at.% have been studied, the parameters of the switching process were found dependent on Bi content. The composition with Bi 6.3 at.% was found to have optimal values of power consumption and switching time. XRD and XPS analyses show that amorphous and crystalline phases in this material, unlike other compositions, are formed by very similar structural blocks with Bi atoms making chemical bonds only with Te atoms.
Impurity modification , Ion-plasma RF sputtering , Materials with phase-change memory , Structure , Switching effect with memory
Text of the article Перейти на текст статьи
NAO Al-Farabi Kazakh National University, IETP, 71 Al-Farabi Avn, Almaty, 050040, Kazakhstan
NAO Al-Farabi Kazakh National University, NNLOT, 71 Al-Farabi Avn, Almaty, 050040, Kazakhstan
Institute of Physics, A.I. Herzen State Pedagogical University of Russia, 48 Moika, St. Petersburg, 191186, Russian Federation
NAO Al-Farabi Kazakh National University
NAO Al-Farabi Kazakh National University
Institute of Physics
10 лет помогаем публиковать статьи Международный издатель
Книга Публикация научной статьи Волощук 2026 Book Publication of a scientific article 2026