Effects of thermal and laser annealing on the structure of Ge2Sb2Te5 thin films
Turmanova K. Prikhodko O. Tolepov Z. Maksimova S. Manabaev N. Almas N.
July 2024S.C. Virtual Company of Physics S.R.L
Chalcogenide Letters
2024#21Issue 7575 - 581 pp.
In this study, we used Raman spectroscopy to compare the local structure of Ge2Sb2Te5 (GST) thin films with thicknesses of 90 nm and 271 nm that were crystallized through thermal annealing and laser radiation (laser annealing) during the recording of Raman spectra in situ. We found that for all crystallized films, the position of the main peaks in the Raman spectra was almost the same, and their structure corresponded to a hexagonal close packed state. It is noteworthy that the full width at half maximum (FWHM) of the main peaks varies considerably depending on the crystallization method used.
Amorphous semiconductor , FWHM , GST , Raman spectroscopy , Sputtering
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NAO al-Farabi Kazakh National University, 71 Al-Farabi Avn, IETP, Almaty, 050040, Kazakhstan
Department of General Physics, Satbayev University, Satpayeva st., 22, Almaty, 050040, Kazakhstan
Department of Science and Innovation, Astana IT University, Mangilik Yel Avn, 55/11, Astana, 010000, Kazakhstan
NAO al-Farabi Kazakh National University
Department of General Physics
Department of Science and Innovation
10 лет помогаем публиковать статьи Международный издатель
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