Energy efficient F atom generation and control in CF4 capacitively coupled plasmas driven by tailored voltage waveforms
Wang X.-K. Masheyeva R. Liu Y.-X. Song Y.-H. Hartmann P. Donkó Z. Schulze J.
August 2024Institute of Physics
Plasma Sources Science and Technology
2024#33Issue 8
Neutral radicals generated by electron impact dissociation of the background gas play important roles in etching and deposition processes in low pressure capacitively coupled plasmas (CCPs). The rate and energy efficiency of producing a given radical depend on the space- and time-dependent electron energy distribution function (EEDF) in the plasma, as well as the electron energy dependent cross sections of the electron-neutral collisions that result in the generation of the radical. For the case of a CCP operated in CF4 gas, we computationally demonstrate that the energy efficiency of generating neutral radicals, such as F atoms can be improved by controlling the EEDF by using tailored voltage waveforms (TVW) instead of single-frequency driving voltage waveforms and that separate control of the radical density and the ion energy can be realized by adjusting the waveform shape at constant peak-to-peak voltage. Such discharges are often used for industrial etching processes, in which the F atom density plays a crucial role for the etch rate. Different voltage waveform shapes, i.e. sinusoidal waveforms at low (13.56 MHz) and high (67.8 MHz) frequencies, peaks- and sawtooth-up TVWs, are used to study their effects on the energy cost / energy efficiency of F atom generation by PIC/MCC simulations combined with a stationary diffusion model. The F atom density is enhanced by increasing the voltage amplitude in the single frequency cases, while the energy cost per F atom generation increases, i.e. the energy efficiency decreases, because more power is dissipated to the ions, as the sheath voltages and the ion energy increase simultaneously. In contrast, using TVWs can result in a lower energy cost and provide separate control of the F atom density and the ion energy. This is explained by the fact that tailoring the waveform shape in this way allows to enhance the high-energy tail of the EEDF during the sheath expansion phase by inducing a non-sinusoidal sheath motion, which results in acceleration of more electrons to high enough energies to generate F atoms via electron-neutral collisions compared to the single frequency cases. Similar effects of TVWs are expected for the generation of other neutral radicals depending on the electron energy threshold and the specific consequences of TVWs on the EEDF under the discharge conditions of interest.
capacitively coupled plasma , F atom density. , particle in cell simulation , voltage waveform tailoring
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Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian, 116024, China
Department of Electrical Engineering and Information Sciences, Ruhr-University Bochum, Bochum, D-44780, Germany
Institute for Solid State Physics and Optics, HUN-REN Wigner Research Centre for Physics, Budapest, 1121, Hungary
Department of General Physics, Satbayev University, Almaty, 050013, Kazakhstan
Key Laboratory of Materials Modification by Laser
Department of Electrical Engineering and Information Sciences
Institute for Solid State Physics and Optics
Department of General Physics
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