Kinetics of Thickness Growth of Silicon Films During Pulsed Magnetron Sputtering Using the Caroline D12C System
Tolubayev K. Zhautikov B. Zobnin N. Dairbekova G. Kabiyeva S.
March 2025Multidisciplinary Digital Publishing Institute (MDPI)
Condensed Matter
2025#10Issue 1
In this study, the effects of specific power (1–100 W/cm2), operating pressure (0.5–3.0 Pa), and voltage frequency (20–500 kHz) on film growth kinetics, morphology, and silicon entrainment were investigated to optimize magnetron sputtering for producing thin silicon films suitable for lithium-ion battery anodes. Silicon films were deposited on copper substrates using the Caroline D12C system. The film thickness and morphology were determined using scanning electron microscopy and atomic force microscopy. It was found that the porosity of the films increases with increasing pressure in the working chamber. It was found that the film morphology is non-uniform up to a thickness of 100–150 nm. After that, the film thickness becomes uniform over the entire substrate surface, and the deposition rate increases sharply, i.e., an induction period is observed. The induction period duration decreases with increasing voltage power and frequency. At the same time, silicon removal increases. Frequency has a greater effect on both parameters. The paper specifies a strategy for the technical and economic optimization of the magnetron sputtering process, which determines a compromise between the positive effect of increasing productivity and the negative effect of silicon removal.
Caroline D12С , growth kinetics , magnetron sputtering , nanofilm , specific power , target
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Department of Metallurgy and Materials Science, Karaganda Industrial University, Temirtau, 101400, Kazakhstan
Department of Metallurgy and Materials Science
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