Photosensitive Schottky Graphite/n-Si Diodes Fabricated by Electron Beam Evaporation
Solovan M.M. Yamrozik G.M. Bridge A.I. Bruce V.V. Maryanchuk P.D.
2021G.V. Kurdyumov Institute for Metal Physics of N.A.S. of Ukraine
Nanosistemi, Nanomateriali, Nanotehnologii
2021#19Issue 4823 - 830 pp.
This paper presents the results of studies of the physical properties of photosensitive Schottky graphite/n-Si diodes fabricated by deposition of the thin graphite films by the electron beam evaporation in a universal vacuum system Leybold–Heraeus L560 from compressed pellets of graphite powder onto the substrates of n-type Si. The current–voltage characteristics (at different temperatures) are measured. The dominant mechanisms of the current transfer through the Schottky diodes in forward biases are determined. As revealed, the dominant current-transport mechanism is conditioned by the generation–recombination processes. The photosensitive Schottky graphite/n-Si diodes possess produce a maximum short-circuit current Isc = 0.38 mA, an open-circuit voltage Voc = 0.33 V, and a fill factor FF = 0.35 under standard illumination conditions (80 mW/cm2). The sensitivity (R) and detectivity (D*) are determined. As established, the studied Schottky graphite/n-Si diodes can be successfully used as ultraviolet-radiation detectors in the photodiode mode of operation.
current transfer mechanisms , graphite , photodetector , Schottky diode , thin films
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Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynsky Str., Chernivtsi, UA-58012, Ukraine
Nazarbayev University, 53, Kabanbay Batyr, Nur-Sultan City, 010000, Kazakhstan
Yuriy Fedkovych Chernivtsi National University
Nazarbayev University
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