Modelling of track formation in nanocrystalline inclusions in Si3N4
Rymzhanov R.A. Volkov A.E. Zhalmagambetova A. Zhumazhanova A. Skuratov V. Dauletbekova A.K. Akilbekov A.T.
28 August 2022American Institute of Physics Inc.
Journal of Applied Physics
2022#132Issue 8
A multiscale modeling is applied to investigate structural changes caused by impacts of swift heavy ions in Si3N4 nanoclusters imbedded into amorphous and crystalline silicon nitride matrices. The approach combines the Monte Carlo code TREKIS describing the excitation kinetics of electronic and atomic subsystems and a classical molecular dynamics tracing subsequent relaxation of lattice atoms. Ion impacts in amorphous and crystalline Si3N4 result in formation of a cylindrical amorphous region of a reduced material density, surrounded by a shell with an increased density. The track diameter inside a nanosized inclusion in crystalline or amorphous matrices was found smaller than in surrounding materials, which can be explained by a heat confinement by grain boundaries.
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Joint Institute for Nuclear Research, Dubna, Russian Federation
Astana Branch, The Institute of Nuclear Physics, Nur-Sultan, Kazakhstan
P.N. Lebedev Physical Institute, The Russian Academy of Sciences, Moscow, Russian Federation
L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan
National Research Nuclear University, MEPhI, Moscow, Russian Federation
Faculty of Natural and Engineering Science, Dubna University, Dubna, Russian Federation
Joint Institute for Nuclear Research
Astana Branch
P.N. Lebedev Physical Institute
L.N. Gumilyov Eurasian National University
National Research Nuclear University
Faculty of Natural and Engineering Science
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