Raman study of polycrystalline si3n4 irradiated with swift heavy ions
Zhumazhanova A. Mutali A. Ibrayeva A. Skuratov V. Dauletbekova A. Korneeva E. Akilbekov A. Zdorovets M.
November 2021MDPI
Crystals
2021#11Issue 11
A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷ 4.87 × 1013 cm−2 ) and Bi (710 MeV, 1 × 1011 cm−2 ÷ 1 × 1013 cm−2 ) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by a buffer zone that was located at a depth that coincided with the thickness of layer, amorphized due to multiple overlapping track regions. The compressive stresses were registered in a subsurface region, while at a greater depth, the tensile stresses were recorded and their levels reached the maximum value at the end of ion range. The size of the amorphous layer was evaluated from the dose dependence of the full width at half maximum (FWHM) (FWHM of the dominant 204 cm−1 line in the Raman spectra and scanning electron microscopy.
Mechanical stresses , Piezospectroscopy , Raman spectra , Silicon nitride , Swift heavy ions
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Department of Technical Physics, L.N. Gumilyov, Eurasian National University, Nur-Sultan, 010008, Kazakhstan
Astana Branch of the Institute of Nuclear Physics, Nur-Sultan, 010000, Kazakhstan
G.N. Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation
Institute of Nuclear Physics and Engineering, National Research Nuclear University «MEPhI», Moscow, 115409, Russian Federation
Department of Nuclear Physics, University «Dubna», Dubna, 141982, Russian Federation
Ural Federal University, Yekaterinburg, 620002, Russian Federation
Department of Technical Physics
Astana Branch of the Institute of Nuclear Physics
G.N. Flerov Laboratory of Nuclear Reactions
Institute of Nuclear Physics and Engineering
Department of Nuclear Physics
Ural Federal University
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