Preparation and performance optimization of HfAlO hybrid gate dielectric thin films driven by solution
Zhang R. Tuokedaerhan K. Wu Z. Du H. Ibraimov M. Sagidolda Y.
August 2024Springer
Journal of Sol-Gel Science and Technology
2024#111Issue 2515 - 529 pp.
The drawbacks of binary metal oxide gate media are gradually emerging, and research on ternary and even multivariate metal oxides is gradually increasing. HfAlO gate dielectric films with different aluminum contents were prepared using the solution method. When Hf: Al = 2:1, the HfAlO film exhibits excellent optical properties with a larger Eg (~5.80 eV) and maximum ∆EC (~2.22 eV). Through XPS analysis, HAO-2 has a relatively high proportion of M–O bonds (69.03%), the lowest proportion of oxygen vacancies (16.16%), and a relatively low proportion of bonded oxygen (14.81%). MOS capacitors with Al/HAO-2/p-Si/Al structure exhibit excellent performance, high k value (9.63), and minimum defect density and leakage current density. In the analysis of the leakage current mechanism, almost all samples exhibit a leakage current conduction mechanism under substrate injection, which follows the pattern of Schottky emission as the primary source at low field strengths, Pool–Frenkel emission as the primary source at high field strengths, and direct tunneling as the primary source at high field strengths. Graphical Abstract: (Figure presented.)
Gate dielectric thin film , Leakage current mechanism , MOS capacitors , Oxygen vacancies , Solution method
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Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Xinjiang, Urumqi, 830046, China
School of Physics Science and Technology, Xinjiang University, Xinjiang, Urumqi, 830046, China
Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University, Almaty, 050040, Kazakhstan
Xinjiang Key Laboratory of Solid State Physics and Devices
School of Physics Science and Technology
Department of Solid State Physics and Nonlinear Physics
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