Solution-Processed Magnesium Oxide Buffer Layer for Improved Stability of CsPbI2Br Perovskite Solar Cells
Yelzhanova Z. Nigmetova G. Mukasheva D. Parkhomenko H.P. Zhumadil G. Aidarkhanov D. Kaikanov M. Elebessov T. Wang T. Kalmakhanbet A. Duan D. Hu H. Pham T.T. Balanay M.P. Jumabekov A.N. Ng A.
January 2026John Wiley and Sons Inc
Solar RRL
2026#10Issue 1
The application of inorganic Cs-based perovskites in solar cells (PSCs) has gained increasing attention as a viable alternative to hybrid organic–inorganic counterparts. However, their device performance and stability remain limited by interfacial and intrinsic material instabilities. To address these challenges, a solution-processed MgO layer is employed for interfacial engineering at the ZnO/CsPbI2Br interface. Incorporating MgO onto the ZnO electron transport layer (ETL) leads to significant improvements, including enlarged perovskite grain size, reduced trap density, and enhanced electron mobility. Moreover, the incorporation of MgO increases the conduction-band energy offset at the ETL/perovskite junction, resulting in a consistently higher open-circuit voltage of PSCs. Stability assessments show that MgO-incorporated devices exhibit significantly improved shelf lifetime. The MgO-incorporated PSC, without encapsulation, stabilizes at an efficiency of 15.3% during a 10 000 s current–time test under maximum power point bias, compared to 10.4% for the control device. Furthermore, proton-irradiation tests simulating the low Earth orbit conditions demonstrate that MgO-incorporated devices retain their initial efficiency after 11 weeks, whereas control devices decline to 47% of their initial value. Overall, this work highlights the crucial role of MgO in interfacial engineering for inorganic Cs-based PSCs and provides valuable insights for the development of cost-effective, radiation-tolerant, and stable photovoltaic devices.
cesium-based perovskites , inorganic perovskites , interfacial engineering , perovskite solar cells , proton irradiation , stability
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Department of Electrical and Computer Engineering, School of Engineering and Digital Sciences, Nazarbayev University Research Administration, Nazarbayev University, Astana, Kazakhstan
Department of Chemical and Materials Engineering, School of Engineering and Digital Sciences, Nazarbayev University Research Administration, Nazarbayev University, Astana, Kazakhstan
Institute of Physical and Technical Sciences, L. N. Gumilev Eurasian National University, Astana, Kazakhstan
Department of Physics, School of Sciences and Humanities, Nazarbayev University Research Administration, Nazarbayev University, Astana, Kazakhstan
National Laboratory of Astana, Nazarbayev University, Astana, Kazakhstan
Department of Biology, School of Sciences and Humanities, Nazarbayev University Research Administration, Nazarbayev University, Astana, Kazakhstan
Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, Shenzhen, China
Department of Chemistry, School of Sciences and Humanities, Nazarbayev University Research Administration, Nazarbayev University, Astana, Kazakhstan
Department of Electrical and Computer Engineering
Department of Chemical and Materials Engineering
Institute of Physical and Technical Sciences
Department of Physics
National Laboratory of Astana
Department of Biology
Hoffmann Institute of Advanced Materials
Department of Chemistry
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