Study of the Microstructure and Phase Composition of Ceramics Based on Silicon Carbide Irradiated with Low-Energy Helium Ions
Uglov V.V. Kholad V.M. Grinchuk P.S. Ivanov I.A. Kozlovsky A.L. Zdorovets M.V.
June 2024Pleiades Publishing
Inorganic Materials: Applied Research
2024#15Issue 3591 - 595 pp.
Abstract: The effect of irradiation with helium ions with energy of 40 keV and doses from 1 × 1014 to 2 × 1017 cm–2 on the microstructure and phase composition of ceramics based on silicon carbide is studied. Radiation growth of the 6H–SiC crystal lattice is revealed. At a dose of 1 × 1016 cm–2, a decrease in deformation is observed related to the formation of gas-vacancy clusters, which are sinks for radiation defects. Amorphization of the near-surface layer is established.
6H–SiC , amorphization , helium , silicon carbide
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Belarusian State University, Minsk, 220030, Belarus
Lykov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, Minsk, 220072, Belarus
Gumilev Eurasian National University, Astana, 010008, Kazakhstan
Institute of Nuclear Physics, Almaty, 050032, Kazakhstan
Belarusian State University
Lykov Heat and Mass Transfer Institute
Gumilev Eurasian National University
Institute of Nuclear Physics
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