Bidirectional functionality of a modified PCBM layer: Enhancing perovskite photovoltaics beyond single-bandgap devices

Sun Y. Ma Q. Wang F. Sun X. Wang T. Zhou X. Li Q. Duan D. Zhang T. Huang X. Lin H. Pan J. Liu W. Li J. Ng A. Yang C. Yuan M. Wu T. Hu H.
October 2025 John Wiley and Sons Inc

InfoMat
2025 #7 Issue 10

Metal electrode corrosion driven by halide migration and interfacial defects remains a significant bottleneck limiting the operational stability and photovoltaic performance of perovskite solar cells (PSCs), particularly in devices with varied bandgaps. Herein, we present a multifunctional interface engineering strategy by incorporating the IL 1-butylpyridinium tetrafluoroborate (BPYBF₄) into the PCBM electron transport layer to simultaneously address these issues. The BF₄⁻ anions coordinate with the Ag⁺, forming a corrosion-resistant layer that mitigates iodine-induced degradation. Concurrently, the BPY⁺ cations react with residual PbI₂ at the perovskite surface, inducing the formation of a 1D perovskite capping layer that effectively passivates interfacial defects and suppresses ion migration. Phase-transition process during film conversion was systematically investigated, revealing a gradual transformation of residual PbI₂ into a protective 1D perovskite structure upon BPYBF₄ incorporation. Additionally, the presence of ionized PCBM enhances surface potential alignment, promoting efficient electron extraction and reducing non-radiative recombination losses. This strategy demonstrates broad applicability—not only enhancing the performance of 1.55 eV normal-bandgap PSCs but also achieving outstanding efficiency for wide-bandgap PSCs, with PCEs of 22.69% for 1.67 eV and 18.60% (certified at 17.75%) for 1.85 eV, respectively. This work provides a facile and scalable approach to simultaneously protect the electrode and stabilize the perovskite films, offering a promising strategy for varied bandgaps PSCs in both single-junction and tandem configurations. (Figure presented.).

1D/3D perovskite , Ag electrode , time-resolved GIWAXS , wide-bandgap

Text of the article Перейти на текст статьи

Hoffmann Institute of Advanced Materials, Postdoctoral Innovation Practice Base, Shenzhen Polytechnic University, Shenzhen, China
Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China
Science and Education Integration College of Energy and Carbon Neutralization, Zhejiang University of Technology, Hangzhou, China
Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
Department of Electrical and Computer Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Astana, Kazakhstan
College of Chemistry, Nankai University, Tianjin, China
Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong

Hoffmann Institute of Advanced Materials
Shanghai Synchrotron Radiation Facility
Science and Education Integration College of Energy and Carbon Neutralization
Research Center for New Energy Technology
Department of Electrical and Computer Engineering
College of Chemistry
Department of Applied Physics

10 лет помогаем публиковать статьи Международный издатель

Книга Публикация научной статьи Волощук 2026 Book Publication of a scientific article 2026