Structure and electronic properties of thin Ge2Sb2 Te5 films produced by DC ion-plasma spattering
Sultanbekov S. Prikhodko O. Almas N.
July 2023S.C. Virtual Company of Phisics S.R.L
Chalcogenide Letters
2023#20Issue 7487 - 496 pp.
The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.
Atomic structure , Chalcogenide glassy semiconductors , Electronic properties , PC-RAM , Switching effect
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Volkovgeology JSC, Kazatomprom, 168, Bogenbai batyr Street, Almaty, 050012, Kazakhstan
IETP, NAO Al-Farabi Kazakh National University, 71 Al-Farabi Avn, Almaty, 050040, Kazakhstan
Department of Science and Innovation, Astana IT University, Mangilik Yel, 55/11, Astana, 010000, Kazakhstan
Volkovgeology JSC
IETP
Department of Science and Innovation
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