Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms
Suchikova Y. Kovachov S. Bohdanov I. Konuhova M. Zhydachevskyy Y. Kumarbekov K. Pankratov V. Popov A.I.
July 2024Multidisciplinary Digital Publishing Institute (MDPI)
Crystals
2024#14Issue 7
This study focuses on the wet chemical synthesis of AlxGa1−xAs nanostructures, highlighting how different deposition conditions affect the film morphology and material properties. Electrochemical etching was used to texture GaAs substrates, enhancing mechanical adhesion and chemical bonding. Various deposition regimes, including voltage switching, gradual voltage increase, and pulsed voltage, were applied to explore their impact on the film growth mechanisms. SEM analysis revealed distinct morphologies, EDX confirmed variations in aluminum content, Raman spectroscopy detected structural disorders, and XRD analysis demonstrated peak position shifts. The findings emphasize the versatility and cost-effectiveness of wet electrochemical methods for fabricating high-quality AlxGa1−xAs films with tailored properties, showing potential for optoelectronic devices, high-efficiency solar cells, and other advanced semiconductor applications.
AlxGa1−xAs , EDX , electrochemical deposition , electrochemical etching , morphology , Raman spectroscopy , SEM , semiconductors , wet chemical synthesis , XRD
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The Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, Berdyansk, 71100, Ukraine
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, Riga, 1063, Latvia
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warsaw, 02-668, Poland
Faculty of Physics and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana, 010008, Kazakhstan
The Department of Physics and Methods of Teaching Physics
Institute of Solid State Physics
Institute of Physics
Faculty of Physics and Technical Sciences
10 лет помогаем публиковать статьи Международный издатель
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