Improvement of β-SiC Synthesis Technology on Silicon Substrate
Suchikova Y. Kovachov S. Bohdanov I. Kozlovskiy A.L. Zdorovets M.V. Popov A.I.
December 2023Multidisciplinary Digital Publishing Institute (MDPI)
Technologies
2023#11Issue 6
This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of SiC/por-Si/mono-Si. The surface morphology of the SiC film revealed islands measuring 2–6 μm in diameter, with detected micropores that were 70–80 nm in size. An XRD analysis confirmed the presence of spectra from crystalline silicon and crystalline silicon carbide in cubic symmetry. The observed shift in spectra to the low-frequency zone indicated the formation of nanostructures, correlating with our SEM analysis results. These research outcomes present prospects for the further utilization and optimization of β-SiC synthesis technology for electronic device development.
annealing , carbonization , electrochemical etching , heterostructures , silicon , silicon carbide , solar cells
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The Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, Berdyansk, 71100, Ukraine
Engineering Profile Laboratory, L.N. Gumilyov, Eurasian National University, Satpaev Str. 5, Astana, 010008, Kazakhstan
Laboratory of Solid State Physics, Institute of Nuclear Physics, Almaty, 050032, Kazakhstan
Institute of Solid State Physics, University of Latvia, 8 Kengaraga St, r., Riga, LV-1063, Latvia
The Department of Physics and Methods of Teaching Physics
Engineering Profile Laboratory
Laboratory of Solid State Physics
Institute of Solid State Physics
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