Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces
Suchikova Y. Bohdanov I. Kovachov S. Lazarenko A. Popov A.A. Tsebriienko T. Karipbayev Z. Popov A.I.
January 2024Springer Science and Business Media Deutschland GmbH
Applied Nanoscience (Switzerland)
2024#14Issue 1231 - 239 pp.
This article presents a study of the mechanism of porous space formation on the surface of single-crystal indium phosphide. The dissolution features of crystals of various types of conductivity and crystallographic orientation of the surface are demonstrated. The attention is focused on the formation of pore chain channels on the surface of n-InP (111). The main stages of the pore formation process are highlighted, which are described according to two competing theories—spontaneous seeding and defect–dislocation mechanism.
Crystallographic pores , Electrochemical etching , Indium phosphide , Pore formation , Surface
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Berdyansk State Pedagogical University, Schmidt Street, 4, Berdyansk, 71100, Ukraine
Institute of Solid State Physics, University of Latvia, Kengaraga, 8, Riga, 1063, Latvia
L.N. Gumilyov, Eurasian National University, Satpayev, 2, Nur-Sultan, 010008, Kazakhstan
Berdyansk State Pedagogical University
Institute of Solid State Physics
L.N. Gumilyov
10 лет помогаем публиковать статьи Международный издатель
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