Ab Initio Investigation of the Stability, Electronic, Mechanical, and Transport Properties of New Double Half Heusler Alloys Ti2Pt2ZSb (Z = Al, Ga, In)


Soltanbek N.S. Merali N.A. Sagatov N.E. Abuova F.U. Elsts E. Abuova A.U. Khovaylo V.V. Inerbaev T.M. Konuhova M. Popov A.I.
March 2025Multidisciplinary Digital Publishing Institute (MDPI)

Metals
2025#15Issue 3

This research aimed to explore the structural, electronic, mechanical, and vibrational properties of double half Heusler compounds with the generic formula Ti2Pt2ZSb (Z = Al, Ga, and In), using density functional theory calculations. The generalized gradient approximation within the PBE functional was employed for structural relaxation and for calculations of vibrational and mechanical properties and thermal conductivity, while the hybrid HSE06 functional was employed for calculations of the electronic properties. Our results demonstrate that these compounds are energetically favorable and dynamically and mechanically stable. Our electronic structure calculations revealed that the Ti2Pt2AlSb double half Heusler compound is a non-magnetic semiconductor with an indirect band gap of 1.49 eV, while Ti2Pt2GaSb and Ti2Pt2InSb are non-magnetic semiconductors with direct band gaps of 1.40 eV. Further analysis, including phonon dispersion curves, the electron localization function (ELF), and Bader charge analysis, provided insights into the bonding character and vibrational properties of these materials. These findings suggest that double half Heusler compounds are promising candidates for thermoelectric device applications and energy-conversion devices, due to their favorable properties.

density functional theory , double half Heusler alloy , mechanical properties , thermal conductivity

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Institute of Physical and Technical Sciences, L. N. Gumilyov, Eurasian National University, Astana, 010000, Kazakhstan
Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Institute of Solid-State Physics, University of Latvia, Riga, 1004, Latvia
Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology “MISIS”, Moscow, 119049, Russian Federation
Vernadsky Institute of Geochemistry and Analytical Chemistry RAS, Moscow, 119991, Russian Federation

Institute of Physical and Technical Sciences
Sobolev Institute of Geology and Mineralogy
Institute of Solid-State Physics
Department of Functional Nanosystems and High-Temperature Materials
Vernadsky Institute of Geochemistry and Analytical Chemistry RAS

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