Influence of the NaCl Dielectric Layer on the Electrical Properties of Graphite/n-Cd1–xZnxTe Schottky Diodes Fabricated by Transferring Drawn Graphite


Вплив діелектричного шару NaCl на електричні властивості діодів Шотткі графіт/n-Cd1–xZnxTe, виготовлених шляхом перенесення нарисованої плівки графіту на підкладки
Solovan M.M. Parkhomenko H.P. Brus V.V. Mostovyi A.I. Maryanchuk P.D.
2021Sumy State University

Journal of Nano- and Electronic Physics
2021#13Issue 41 - 4 pp.

This paper reports the results of an investigation of the electrical properties of graphite/n-Cd1–xZnxTe Schottky diodes prepared by the transfer of dry drawn graphite films on CdCd1–xZnxTe substrates. The CdCd1–xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity p ≈ 102 Ohm-cm. The values of the series Rs and shunt Rsh resistances of graphite/n-Cd1–xZnxTe and graphite/NаCl/n-Cd1–xZnxTe Schottky diodes were determined from the dependence of their differential resistance Rdif. The height of the potential barrier of graphite/n-Cd1–xZnxTe and graphite/NаCl/n-Cd1–xZnxTe Schottky diodes was determined by the extrapolation of the linear segments of the I-V characteristics at room temperature toward the interception with the voltage axis and was equal 0.63 eV and 1.12 eV, respectively. The largest value of the potential barrier height for the sample graphite/NаCl/n-Cd1–xZnxTe was achieved by the presence of the NaCl dielectric layer. The dominant mechanisms of charge transport through graphite/n-Cd1–xZnxTe and graphite/NаCl/n-Cd1–xZnxTe Schottky diodes were described in the scope of generation-recombination and tunneling models (for forward and reversebias, respectively).

CdZnTe , Graphite , I-V characteristics , Structures

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YuriyFedkovychChernivtsi National University, Kotsyubynskyi St., Chernivtsi, 58012, Ukraine
Department of Physics, School of Sciences and Humanities, Nazarbayev University, Nur-Sultan, Kazakhstan

YuriyFedkovychChernivtsi National University
Department of Physics

10 лет помогаем публиковать статьи Международный издатель

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