A High-Detectivity, Fast-Response, and Radiation-Resistant TiN/CdZnTe Heterojunction Photodiode
Solovan M.M. Mostovyi A.I. Parkhomenko H.P. Kaikanov M. Schopp N. Asare E.A. Kovaliuk T. Veřtát P. Ulyanytsky K.S. Korbutyak D.V. Brus V.V.
18 January 2023John Wiley and Sons Inc
Advanced Optical Materials
2023#11Issue 2
A novel high-performance ultraviolet–visible–near-infrared (300–820 nm) heterojunction photodiode based on radiation-resistant semiconductor materials is proposed. A titanium nitride (TiN) “window” layer is deposited via magnetron sputtering onto a cadmium zinc telluride (CdZnTe) solid solution single crystal. The TiN/CdZnTe heterojunction photodiodes concurrently reveal an outstanding detectivity, response time, and linear dynamic range outperforming similar heterojunction photodiodes and photodetectors, based on photoactive inorganic compound semiconductor materials. Moreover, the added feature of the proposed heterojunction photodiodes is their excellent radiation resistance, experimentally demonstrated under short impulse proton irradiation (170 keV) with an accumulated fluence of 2 × 1012 proton cm−2. This unusual synergy of high performance and advanced radiation resistance of the TiN/CdZnTe photodiodes provides a unique platform for operation in space or radioactively contaminated environments.
CdZnTe , detectivity , photodiodes , radiation resistance , response time , TiN
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Department of Physics, School of Sciences and Humanities, Nazarbayev University, Astana, 010000, Kazakhstan
Department of Electronics and Energy Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine
Department of Chemistry and Biochemistry, University of California Santa Barbara (UCSB), Santa Barbara, 93106, CA, United States
Energetic Cosmos Laboratory, Nazarbayev University, Astana, 010000, Kazakhstan
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Prague 2, 12116, Czech Republic
Institute of Physics, Czech Academy of Sciences, Na Slovance 1999/2, Prague 8, 18221, Czech Republic
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine
Department of Physics
Department of Electronics and Energy Engineering
Department of Chemistry and Biochemistry
Energetic Cosmos Laboratory
Department of Condensed Matter Physics
Institute of Physics
V. Lashkaryov Institute of Semiconductor Physics
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