The specificity intrinsic luminescence of a CsI crystal under the influence of low-temperature elastic deformation
Shunkeyev K. Maratova A. Myasnikova L. Sagimbayeva S. Zhanturina N.
15 December 2021Elsevier B.V.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2021#5091 - 6 pp.
The features of radiative relaxation of self-trapped excitons (STEs) in CsI crystals under lowering of the lattice symmetry by low-temperature (83 K) uniaxial elastic deformation (ε = 0.5–0.7 %) are studied using the methods of luminescence spectroscopy. The sensitivity of intrinsic luminescence (peaked at 4.27 eV and 3.67 eV) to elastic deformation and ionizing radiation is detected. It is determined that the luminescence enhancement in elastically deformed CsI crystals is caused by the enhancement of 3.67 eV luminescence related to the STEs with an asymmetric configuration (weak off-center), while the 4.27 eV luminescence ascriebed to the STEs with a symmetric configuration (on-center) becomes suppressed. The study of the luminescence temperature dependence in CsI exposed to elastic deformation allowed us to determine the potential barrier Δ2= 8 meV between the radiative states of the on– and weak off-center configurations of STEs.
CsI crystal , Elastic deformation , Self-trapped exciton , Temperature dependence , X-ray luminescence
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K. Zhubanov Aktobe Regional University, Moldagulova av. 34, Aktobe, 030000, Kazakhstan
K. Zhubanov Aktobe Regional University
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