Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation
Shunkeyev K. Sagimbayeva S. Ubaev Z. Kenzhebayeva A.
August 2024Multidisciplinary Digital Publishing Institute (MDPI)
Crystals
2024#14Issue 8
This study investigates the radiative relaxation of electronic excitations through luminescence spectroscopy techniques applied to high-purity KBr crystals subjected to low-temperature (85 K) uniaxial deformation along the <100> and <110> crystallographic directions. Results demonstrate that the most significant enhancement in the intensity of σ-(4.42 eV) and π-(2.3 eV) luminescence from self-trapped excitons in KBr crystals occurs with elastic deformation along the <110> direction, aligning with the axis of the hole component of the anion self-trapped exciton. Deformation-induced changes in X-ray, tunneling, and thermally stimulated luminescence spectra reveal a new band, denoted as Ex, peaking at approximately 3.58 eV, attributed to tunneling charge exchange between the F’- and VK-centers in their ground state.
high-purity KBr crystal , ionic crystal , low temperature , self-trapped exciton , thermally stimulated luminescence , tunnel luminescence , uniaxial deformation , X-ray luminescence
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Scientific Center “Radiation Physics of Materials”, K. Zhubanov Aktobe Regional University, Aktobe, 030000, Kazakhstan
Scientific Center “Radiation Physics of Materials”
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Книга Публикация научной статьи Волощук 2026 Book Publication of a scientific article 2026