Estimation of the Conditions of Irradiation of Silicon Ingots in the WWR-K Reactor
Romanova N.K. Aitkulov M.T. Gizatulin S.K. Dyussambayev D.S. Martyushov A.L. Nakipov D.A. Sairanbayev D.S. Shaimerdenov A.A.
February 2023Pleiades Publishing
Journal of Surface Investigation
2023#17Issue 1111 - 115 pp.
Abstract: Currently, nuclear facilities around the world are mainly doping silicon ingots with a diameter of 150–200 mm, but analysis of the market shows that there is a tendency toward an increase in the diameter of the ingot. However, the larger the diameter of the ingot, the harder it is to achieve uniform doping, especially under the condition when the irradiation position is located at some distance from the reactor core. The uniform doping of silicon is important for two reasons: the finished semiconductor device must operate at a stable current density and must have reproducible electrical characteristics. The reactor is equipped with neutron beams and vertical irradiation positions of different diameters. Silicon ingots with a diameter of more than 200 mm in the WWR-K reactor can be doped in a special niche of experimental devices, but it is necessary to study the neutron-physical characteristics in this irradiation position for this. The study presents the results of computational and experimental study of the neutron field in the niche of experimental devices of the WWR-K reactor planned to be used for the neutron-transmutation doping of silicon ingots of large diameter. Research is being carried out on the possibility of irradiating large-diameter silicon ingots in the WWR-K reactor with a target value of about 4% for the axial coefficient of irregularity. The thermal-neutron flux density at the silicon-ingot location is about 3 × 107 cm–2 s–1. In the irradiation position, the fraction of thermal neutrons with energies of E n < 1 keV is about 77%. It is shown that a neutron-fluence accumulation of more than 1017 cm–2 is required to obtain silicon with an electrical resistivity of 500 Ω cm and below. Eventually, it is necessary to develop a special design for the irradiation device with the required irradiation parameters.
neutron flux , niche of experimental devices , silicon doping , volumetric irregularity , WWR-K reactor
Text of the article Перейти на текст статьи
Institute of Nuclear Physics, Ministry of Energy of Republic of Kazakhstan, Almaty, 050032, Kazakhstan
Institute of Nuclear Physics
10 лет помогаем публиковать статьи Международный издатель
Книга Публикация научной статьи Волощук 2026 Book Publication of a scientific article 2026