Room-temperature multiple ligands-tailored SnO2 quantum dots endow in situ dual-interface binding for upscaling efficient perovskite photovoltaics with high V OC
Ren Z. Liu K. Hu H. Guo X. Gao Y. Fong P.W.K. Liang Q. Tang H. Huang J. Zhang H. Qin M. Cui L. Chandran H.T. Shen D. Lo M.-F. Ng A. Surya C. Shao M. Lee C.-S. Lu X. Laquai F. Zhu Y. Li G.
December 2021Springer Nature
Light: Science and Applications
2021#10Issue 1
The benchmark tin oxide (SnO2) electron transporting layers (ETLs) have enabled remarkable progress in planar perovskite solar cell (PSCs). However, the energy loss is still a challenge due to the lack of “hidden interface” control. We report a novel ligand-tailored ultrafine SnO2 quantum dots (QDs) via a facile rapid room temperature synthesis. Importantly, the ligand-tailored SnO2 QDs ETL with multi-functional terminal groups in situ refines the buried interfaces with both the perovskite and transparent electrode via enhanced interface binding and perovskite passivation. These novel ETLs induce synergistic effects of physical and chemical interfacial modulation and preferred perovskite crystallization-directing, delivering reduced interface defects, suppressed non-radiative recombination and elongated charge carrier lifetime. Power conversion efficiency (PCE) of 23.02% (0.04 cm2) and 21.6% (0.98 cm2, VOC loss: 0.336 V) have been achieved for the blade-coated PSCs (1.54 eV Eg) with our new ETLs, representing a record for SnO2 based blade-coated PSCs. Moreover, a substantially enhanced PCE (VOC) from 20.4% (1.15 V) to 22.8% (1.24 V, 90 mV higher VOC, 0.04 cm2 device) in the blade-coated 1.61 eV PSCs system, via replacing the benchmark commercial colloidal SnO2 with our new ETLs.
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Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), Guangdong-Hong Kong-Macao (GHM) Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Department of Electrical and Computer Engineering, Nazarbayev University, Nur-Sultan, Kazakhstan
The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), Thuwal, 23955-6900, Saudi Arabia
Department of Physics, The Chinese University of Hong Kong, Shatin, 999077, Hong Kong
Center of Super-Diamond and Advanced Films (COSDAF), Department of Chemistry, City University of Hong Kong, Hong Kong
Department of Electronic and Information Engineering
Department of Electrical and Computer Engineering
The Hong Kong Polytechnic University Shenzhen Research Institute
Hoffmann Institute of Advanced Materials
Department of Applied Physics
Department of Chemical and Biological Engineering
King Abdullah University of Science and Technology (KAUST)
Department of Physics
Center of Super-Diamond and Advanced Films (COSDAF)
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