Structural Transformation of Thin Ge2Sb2Te5 Films Produced by Ion-Plasma Co-Sputtering Under Laser Irradiation


Prikhodko O.Y. Ismailova G.A. Zhakypov A.S. Kolobov A.V. Turmanova K.N. Nemkaeva R.R. Maksimova S.Y. Tolepov Z.K. Peshaya S.L.
April 2023Springer

Journal of Electronic Materials
2023#52Issue 42492 - 2498 pp.

Structural transformation under laser irradiation in nanosized amorphous Ge2Sb2Te5 films modified with silver (Ge2Sb2Te5) is investigated herein. Films with thickness of ~ 100 nm were obtained by ion-plasma radio-frequency magnetron sputtering of a Ge2Sb2Te5-Ag combined polycrystalline target in an argon atmosphere. The silver concentration in the films was varied up to 12.3 at.%. The structure of amorphous films under laser irradiation was assessed in situ by Raman spectroscopy. The results showed that in the Ge2Sb2Te5 and Ge2Sb2Te5 films, under the action of laser irradiation, a phase transition occurred from an amorphous to a crystalline state. A phenomenon was observed in the phase transition in the Ge2Sb2Te5 films featuring the absence of an intermediate phase with a cubic structure (fcc) under the transition from the amorphous phase to the final phase with a stable hexagonal structure (hcp) at a certain concentration of Ag (5.5 and 12.3 at.%) and irradiation energy (1.6 mW). The discovery of this feature of the phase transition in Ge2Sb2Te5 films, which is controlled by the Ag concentration and irradiation power, is important for both the implementation of multilevel information recording and increased recording speed.

impurity modification , Ion-plasma RF sputtering , laser irradiation , materials with phase-change memory , optical recording of information , phase transition

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IETP, NAO Al-Farabi Kazakh National University, 71 Al-Farabi Avn, Almaty, 050040, Kazakhstan
Department of Physical Electronics, Institute of Physics, Russian State Pedagogical University. A.I. Herzen, Moika 48, St. Petersburg, 191186, Russian Federation

IETP
Department of Physical Electronics

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