Recombination Luminescence and Electron–Hole Trapping Centers in BaSO4-Bi Phosphor
Pazylbek S. Nurakhmetov T.N. Nurpeissov A.S. Alibay T.T. Sadykova B.M. Shamiyeva R.K. Zarkov A. Kareiva A.
June 2025Multidisciplinary Digital Publishing Institute (MDPI)
Crystals
2025#15Issue 6
This study of the BaSO4-Bi phosphor has revealed that the accumulated energy after external optical excitation exhibits specific characteristics. During irradiation with photon energy exceeding the bandgap, in addition to the intrinsic ultraviolet emission of the Bi3+ ion, several recombination emissions and emission from the Bi2+ ion are observed. At 80 K, the recombination luminescence states and Bi2+ ion emission form combined electronic states. Upon heating of the BaSO4-Bi phosphor, these combined electronic states decay into recombination emissions at 2.34 eV, 2.4 eV, 3.1 eV, and 2.7 eV, as well as Bi2+ ion emission at 1.97 eV. It is assumed that the 2.34 eV, 2.4 eV, and 3.1 eV emissions are associated with the recombination of electrons released from ionized (Formula presented.) electron trapping centers with nonequivalently localized holes in the host lattice. The 2.7 eV emission is attributed to the decay of an exciton formed by electron–hole recombination near a Bi3+ ion.
electron–hole trapping centers , luminescence , phosphates , phosphor , sulfates , visible emission
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Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Campus #3, St. Kazhymukana 13, Astana, Z01C0X0, Kazakhstan
Institute of Chemistry, Faculty of Chemistry and Geosciences, Vilnius University, Naugarduko 24, Vilnius, LT-03225, Lithuania
Institute of Physical and Technical Sciences
Institute of Chemistry
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