Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD

Parkhomenko I. Vlasukova L. Komarov F. Kovalchuk N. Demidovich S. Zhussupbekova A. Zhussupbekov K. Shvets I.V. Milchanin O. Zhigulin D. Romanov I.
22 August 2023 American Chemical Society

ACS Omega
2023 #8 Issue 33 30768 - 30775 pp.

Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH₄/N₂ = 1.875 and SiH₄/N₂O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH₄/N₂/N₂O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiO_x and SiN_x films. Nanocrystalline phases of Si as well as α- and β-Si₃N₄ were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films.

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Belarusian State University, Kurchatov Str. 5, Minsk, 220045, Belarus
A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University, Kurchatov Str. 7, Minsk, 220045, Belarus
Joint Stock Company “Integral”, Kazintsa Str. 121 A, Minsk, 220108, Belarus
School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin, D02 PN40, Ireland
L.N. Gumilyov Eurasian National University, 2 Satpayev Street, Astana, 010000, Kazakhstan

Belarusian State University
A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
Joint Stock Company “Integral”
School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN)
L.N. Gumilyov Eurasian National University

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