Chemical analysis of ion traces in the betta Ga2O3 structure and fundamentals of molecular dynamics of mobilization hydrogen and helium molecules
Nygymanova A. Yergaliuly G. Mauyey B. Turar R. Makhanov K. Tulekov Y. Kurmanaliyev Z. Sharipov Z. Imanova G. Bekpulatov I.R. Vinogradov I. Mirzayev M.N.
March 2026Elsevier B.V.
Results in Materials
2026#29
In the presented work, the molecular dynamics simulation and thermal conductivity mechanism of implantation of beta Ga2O3 structure with hydrogen and helium ions with energy 100 eV were analyzed. The mechanism of the initial formation stages of gas-atom-gas clustering in the β-Ga2O3 structure by proton and helium implantation was simulated using the LAMMPS package. The thermal conductivity is anisotropic in the crystal structure, and varies depending on the crystal orientation, with the highest conductivity observed along the k(001) direction.
Anisotropic , Betta gallium oxide , Ion traces , LAMMPS software , Molecular dynamics simulation , Thermal conductivity
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L.N. Gumilyov Eurasian National University, Astana, 010008, Kazakhstan
International Intergovernmental Organization Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation
Institute of Physics, Ministry of Science and Education Republic of Azerbaijan, Baku, Azerbaijan
Azerbaijan University of Architecture and Construction, Baku, AZ1073, Azerbaijan
Khazar University, Baku, AZ1096, Azerbaijan
Karshi State University, Karshi, Uzbekistan
L.N. Gumilyov Eurasian National University
International Intergovernmental Organization Joint Institute for Nuclear Research
Institute of Physics
Azerbaijan University of Architecture and Construction
Khazar University
Karshi State University
10 лет помогаем публиковать статьи Международный издатель
Книга Публикация научной статьи Волощук 2026 Book Publication of a scientific article 2026