Specific Features of Formation of Electron and Hole Trapping Centers in Irradiated CaSO4-Mn and BaSO4-Mn


Nurakhmetov T.N. Alibay T.T. Zhangylyssov K.B. Daurenbekov D.H. Zhunusbekov A.M. Kainarbay A.Z. Sadykova B.M. Tolekov D.A. Shamiyeva R.K.
July 2023Multidisciplinary Digital Publishing Institute (MDPI)

Crystals
2023#13Issue 7

Spectroscopic and thermoactivation methods were used to study the processes of accumulation of electron and hole trapping centers and energy transfer of electronic excitations to impurities in (Formula presented.) and (Formula presented.). It is shown that electronic trapping centers are created during the excitation of an anionic complex as a result of charge transfer from (Formula presented.) to closely spaced anionic complexes (Formula presented.) in (Formula presented.) and (Formula presented.). In (Formula presented.) and (Formula presented.), energy transfer from the host to impurities occurs at the moment of charge transfer from the excited anionic complex to the combined radiative electronic state at 2.95–3.1 eV. This combined state is formed from electronic trapping centers (Formula presented.) and (Formula presented.). It was found that the emerging combined radiative states at 2.95–3.1 eV of sulfates, which are formed as a result of charge transfer from the excited anionic complexes to the excited state of impurities, (Formula presented.), occupy the same energy levels as the intrinsic electronic trapping center (Formula presented.) of the host at 2.95–3.17 eV. Experimental results show that during UV photon irradiation, anionic complexes are excited mainly near impurities in sulfates.

electron-hole trapping centers , intrinsic emission , phosphor , recombination , sulfate

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Physics-Technical Faculty, L. N. Gumilyov Eurasian National University, 2 Satpayev Str., Astana, Z01C0X0, Kazakhstan

Physics-Technical Faculty

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