Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystall
Nurakhmetov T.N. Zhangylyssov K.B. Zhunusbekov A.M. Daurenbekov D.H. Alibay T.T. Sadykova B.M. Yussupbekova B.N. Tolekov D.A.
2021L.N. Gumilyov Eurasian National University
Eurasian Journal of Physics and Functional Materials
2021#5Issue 3235 - 241 pp.
The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO24- and localization of holes in the form of SO4- radical. Based on the measurement of the spectrum of excitation of long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).
crystals , electron , hole , luminescence , sulfates , trap centers
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L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan
L.N. Gumilyov Eurasian National University
10 лет помогаем публиковать статьи Международный издатель
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