A self-powered UV-vis-NIR graphite/CdZnTe Schottky junction photodiode
Mostovyi A.I. Kuryshchuk S.І. Asanov N. Parkhomenko H.P. Kovaliuk T.T. Orletskyi I.G. Solovan M.M. Brus V.V.
August 2023Institute of Physics
Semiconductor Science and Technology
2023#38Issue 8
We proposed a self-powered UV-vis-NIR Schottky junction photodiode based on a unique combination of radiation-hard functional materials: thin-film semi-metal Graphite and CdZnTe single-crystal compound semiconductor. The graphite/CdZnTe Schottky junction photodiodes exhibit a maximum responsivity of 0.25 A W−1 and detectivity of 6.5 × 1011 Jones, close to the best heterojunction photodiodes based on CdZnTe solid solution. The devices are also characterized by short rise/fall times (1.2/7.2 µs) and a wide linear dynamic range (77 dB). The proposed photodiodes are promising for applications in space and terrestrial areas with high levels of ionizing radiation.
CdZnTe , detectivity , graphite , photodiode , response time
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Department of Physics, School of Sciences and Humanities, Nazarbayev University, Astana, 010000, Kazakhstan
Department of Electronics and Energy Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Prague 2, 12116, Czech Republic
Faculty of Physics, Adam Mickiewicz University, Poznan, 61-614, Poland
Department of Physics
Department of Electronics and Energy Engineering
Department of Condensed Matter Physics
Faculty of Physics
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