Thermal rectification in polytelescopic Ge nanowires
Molaei F. Farzadian O. Zarghami Dehaghani M. Spitas C. Hamed Mashhadzadeh A.
November 2022Elsevier Inc.
Journal of Molecular Graphics and Modelling
2022#116
Herein we served non-equilibrium molecular dynamics (NEMD) approach to simulate thermal rectification in the mono- and polytelescopic Ge nanowires (GeNWs). We considered mono-telescopic structures with different Fat-Thin configurations (15-10 nm-nm or Type (I); 15-5 nm-nm or Type (II); and 10–5 or Type (III) nm-nm) as generic models. We simulated the variation of thermal conductivity against interfacial cross-sectional temperature as well as the direction of heat transfer, where a higher thermal conductivity correlating to thicker nanowires, and a more significant drop (or discontinuity) in the average interface temperature in the positive (or negative) direction were detected. Noticeably, interfacial thermal resistance followed the order of Type (II) (48 K/μW, maximal) ˃ Type (III) ˃ Type (I) (5 K/μW, minimal). In the second stage, a series of polytelescopic nanostructures of GeNWs were born with consecutive cross-sectional interfaces. Surprisingly, larger interfacial cross-sectional areas equivalent to smaller diameter changes along the GeNWs were responsible for higher temperature rectification. This led to a very limited thermal conductivity loss or a very high unidirectional heat transfer along the polytelescopic structures - the key for manufacturing next generation high-performance thermal diodes.
Molecular dynamics simulation , Polytelescopic , Telescopic nanowires , Thermal rectification , Thermal resistance
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Mining and Geological Engineering Department, The University of Arizona, AZ, United States
Stantec Consulting Company, AZ, United States
Mechanical and Aerospace Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Nur-Sultan, 010000, Kazakhstan
Mining and Geological Engineering Department
Stantec Consulting Company
Mechanical and Aerospace Engineering
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