Charge transport features of CdTe-based X- and γ-ray detectors with Ti and TiOx Schottky contacts
Maslyanchuk O. Solovan M. Brus V. Maryanchuk P. Maistruk E. Fodchuk I. Gnatyuk V.
1 February 2021Elsevier B.V.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2021#988
The X- and γ-ray detectors, formed as Ti/p-CdTe/Au/Cu and TiOx/p-CdTe/MoOx diode structures with Ti and TiOx Schottky contacts, created by electron-beam evaporation and DC reactive magnetron sputtering of Ti, respectively, have been investigated. The structural, electrical and spectroscopic properties of the Schottky diodes were studied by X-ray diffraction, I–V characteristic and isotope spectrum measurements, respectively. The current transport processes in the Ti/p-CdTe/Au/Cu and TiOx/p-CdTe/MoOx heterostructures at relatively low voltages were well described by the models of the carrier generation–recombination in the space-charge region and space-charge limited current. Comparing the experimental data and calculation results, the energies of generation–recombination centers and hole traps, density of discrete trapping centers were determined, and charge carrier lifetimes. A rapid increase in the reverse current due to the Poole–Frenkel emission was observed and this was attributed to the presence of a thin intermediate insulator layer in the p-CdTe/MoOx interface (near-contact contact). The I–V characteristics of the Schottky diodes have been analyzed using the model of space-charge limited current taking into account the Poole–Frenkel effect. The TiOx/p-CdTe/MoOx detectors were tested using 241Am isotope emission.
CdTe crystal , Charge transport , Heterostructure , Isotope emission spectra , I–V characteristics , Reverse current , Schottky diode , Space-charge region , X/γ-ray detector
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Yuriy Fedkovych Chernivtsi National University, Kotsyubynskyi Str. 2, Chernivtsi, 58012, Ukraine
Nazarbayev University, 53 Kabanbay Batyr 010000, Nur-Sultan City, Kazakhstan
V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Prospekt Nauky 41, Kyiv, 03028, Ukraine
Yuriy Fedkovych Chernivtsi National University
Nazarbayev University
V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
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