PHOTOCONDUCTIVITY OF GADOLINIUM-DOPED CARBON NANOTUBES
Mammadov A.G. Abaszade R.G. Babanli M.B. Kotsyubynsky V.O. Gur E. Soltabayev B.D. Margitych T.O. Stetsenko M.O.
September 2023International Organization on Technical and Physical Problems of Engineering
International Journal on Technical and Physical Problems of Engineering
2023#15Issue 353 - 58 pp.
In this research the photoelectric properties of multiwall carbon nanotubes were studied. The spectral dependencies of photosensitivity for gadolinium-doped multiwall carbon nanotubes (Gd 10%) were investigated. The spectral characteristics for gadolinium-doped multiwall carbon nanotubes have been measured at the wavelength range from 400 nm to 900 nm under the applied voltage from 1 to 9 V. The voltage of 3V leads to the appearance of the highest sensitivity value at a wavelength λ~480 nm and the most significant photocurrent peak equal to Ip~0.158 μA. Approximately the same peak value is observed at a wavelength of λ~540 nm. Using U=5V leads to a decrease and loss of photosensitivity. The widest photosensitivity range is observed at a voltage of U=1 V. Using this voltage value can be effective for detector applications. Experimental data and plotted I-V characteristics are presented for six wavelengths from the 640-880 nm spectral range. Based on I-V curves, the weak photosensitivity for any voltage from 1 to 9 V at λ~640 nm was registered. The increasing wavelengths λ~720, 760, 780, and 880 nm lead to an increase in the photocurrent value. The voltage value equal to 7 V leads to the photosensitivity maximum. The results are promising for the accessible and cost-effective fabrication of Gd-doped MWCNTs for detector and optoelectronic devices.
Gd-Doped MWCNT , Photocurrent , Spectral Photosensitivity
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Azerbaijan State Oil and Industry University, Baku, Azerbaijan
Precarpathian National University, Ivano-Frankivsk, Ukraine
Eskisehir Osmangazi University, Eskisehir, Turkey
National Laboratory Astana, Nazarbayev University, Astana, Kazakhstan
Kiev Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kiev, Ukraine
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Azerbaijan State Oil and Industry University
Precarpathian National University
Eskisehir Osmangazi University
National Laboratory Astana
Kiev Institute for Nuclear Research
Institute of Semiconductor Physics
Key Laboratory of Optoelectronic Devices and Systems
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