Nanoindentation testing of Si3N4 irradiated with swift heavy ions


Korneeva E.A. Ibrayeva A. Janse van Vuuren A. Kurpaska L. Clozel M. Mulewska K. Kirilkin N.S. Skuratov V.A. Neethling J. Zdorovets M.
November 2021Elsevier B.V.

Journal of Nuclear Materials
2021#555

We report the results of the nanoindentation tests of silicon nitride irradiated with Ar (46 MeV), Kr (107 MeV), Xe (167 MeV, 220 MeV) and Bi (710 MeV) ions. The behaviour of hardness with respect to ion fluence was analyzed and correlated with the microstructure evolution examined using transmission electron microscopy. Insignificant changes in hardness are observed for ion species (Ar, Kr) for which the electronic stopping power is less than the threshold of latent track formation. Accumulation of latent tracks produced by Xe and Bi ions results first in hardening and then, after track region overlapping and amorphization of the crystalline matrix, in softening of irradiated silicon nitride.



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Joint Institute for Nuclear Research, Dubna, Russian Federation
National University of Science and Technology NUST-MISiS, Moscow, Russian Federation
Nur-Sultan Branch of Institute of Nuclear Physics, Nur-Sultan, Kazakhstan
Centre for HRTEM, Nelson Mandela University, Port Elizabeth, South Africa
National Center for Nuclear Research, Otwock-Swierk, Poland
National Research Nuclear University MEPhI, Moscow, Russian Federation
Dubna State University, Dubna, Russian Federation

Joint Institute for Nuclear Research
National University of Science and Technology NUST-MISiS
Nur-Sultan Branch of Institute of Nuclear Physics
Centre for HRTEM
National Center for Nuclear Research
National Research Nuclear University MEPhI
Dubna State University

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