Optical Properties of Selenium-Hyperdoped Si Layers: Effects of Laser and Thermal Treatment
Komarov F.F. Vlasukova L.A. Milchanin O.V. Parkhomenko I.N. Berencen Y. Alzhanova A.E. Wang T. Zuk J.
May 2023Springer
Journal of Applied Spectroscopy
2023#90Issue 2358 - 365 pp.
Silicon layers with a selenium impurity concentration up to 1021 cm–3, which exceeds the equilibrium solubility limit of this impurity in silicon by four orders of magnitude, were obtained by high-dose ion implantation followed by pulsed laser annealing at pulse energy densities from 0.5 to 2.5 J/cm2. Rutherford backscattering of He+ ions showed that up to 70% of the implemented impurity atoms were localized at silicon crystal-lattice sites after laser annealing. The Se-hyperdoped Si layers were characterized by increased (up to 45–55%) absorption in the spectral range 1100–2400 nm. Thermal treatment (550°C for 30 min followed by 850°C for 5 min) did not increase the IR absorption as compared with the initial Si, which was explained by Se losses resulting from diffusional redistribution. Recrystallization of Si layers amorphized by Se ions and redistribution of the dopant with equilibrium thermal treatment were theoretically evaluated.
IR-light absorption , laser annealing , selenium implantation , silicon , thermal treatment
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A. N. Sevchenko Institute of Applied Physical Problems, Belarusian State University, Minsk, Belarus
Belarusian State University, Minsk, Belarus
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
N. N. Gumilev Eurasian National University, Astana, Kazakhstan
Maria Curie-Sklodowska University, Lublin, Poland
A. N. Sevchenko Institute of Applied Physical Problems
Belarusian State University
Helmholtz-Zentrum Dresden-Rossendorf
N. N. Gumilev Eurasian National University
Maria Curie-Sklodowska University
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