Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams
Koishybayeva Z. Konusov F. Pavlov S. Sidelev D. Nassyrbayev A. Gadyrov R. Tarbokov V. Polisadova E. Akilbekov A.
February 2025Elsevier B.V.
Optical Materials: X
2025#25
In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.
Gallium oxide , Magnetron sputtering , Optical properties , Photoconductivity , Pulsed ion irradiation , Thin films
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L.N. Gumilyov Eurasian National University, 2 Satpayev Str., Astana, 010008, Kazakhstan
National Research Tomsk Polytechnic University, 30 Lenina Ave., Tomsk, 634050, Russian Federation
National Research Tomsk State University, 36 Lenina Ave., Tomsk, 634050, Russian Federation
L.N. Gumilyov Eurasian National University
National Research Tomsk Polytechnic University
National Research Tomsk State University
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