Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures
Klochkov A.N. Yskakov A. Vinichenko A.N. Safonov D.A. Kargin N.I. Bulavin M.V. Galushko A.V. Yamurzin V.R. Vasil’evskii I.S.
October 2023Multidisciplinary Digital Publishing Institute (MDPI)
Materials
2023#16Issue 20
The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm−2 ÷ 1.2 × 1016 cm−2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.
electron concentration , high resolution X-ray diffraction , InGaAs , mobility , neutron irradiation , photoluminescence , two-dimensional electron gas
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MEPhI Institute of Nanoengineering in Electronics, Spintronics and Photonics, Moscow, 115409, Russian Federation
Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation
Faculty of Physics and Technics, L.N. Gumilev Eurasian National University, Astana, 010008, Kazakhstan
Institute of Nuclear Physics, Almaty, 050032, Kazakhstan
MEPhI Institute of Nanoengineering in Electronics
Joint Institute for Nuclear Research
Faculty of Physics and Technics
Institute of Nuclear Physics
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