The Improved Non-Polar Gas Sensing Performance of Surface-Modified Porous Silicon-Based Gas Sensors
Khaniyev B. Ibraimov M. Sagidolda Y. Tezekbay Y. Duisebayev T. Tileu A. Khaniyeva A.
January 2023MDPI
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2023#13Issue 1
The present article studied gas sensor sensing characteristics based on surface-modified porous silicon (PS) by depositing the metal oxide semiconductor layer. The PS layer was prepared through the electrochemical etching of crystalline silicon in an HF-based solution. DC magnetron sputtering technology was used to obtain the p-CuO layer on the surface of the p-PS. The obtained material’s structural, morphological, and sensing behavior were investigated using SEM, XRD, Raman spectra, and the current–voltage characteristics. For the detection of toluene and chloroform vapors, a planar structure was used. The sensing response value revealed that the CuO/PS-based gas sensors have good sensitivity for toluene and chloroform vapors. The sensing mechanism is explained using schematic energy band diagrams. Therefore, this approach is helpful for the development of a simple, cost-effective sensor for detecting non-polar chemical analytes.
chloroform , copper oxide , heterostructure , magnetron sputtering , porous silicon , sensitivity , toluene gas sensor
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Department of Physics and Technology, Al-Farabi Kazakh National University, Almaty, 050040, Kazakhstan
Department of Physics and Technology
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