INFLUENCE OF THE RATIO OF GASE CONSUMPTION N2/Ar AND MAGNETROPOWER ON THE DENSITY AND STOICHIOMETRIC COMPOSITION OF TINXFILMS SYNTHESIZED BY MAGNETRON SPUTTERING METHOD
МАГНЕТРОНДЫ БҮРКУ ӘДІСІ АРҚЫЛЫ СИНТЕЗДЕЛГЕН TINXҚАБЫҚШАЛАРЫНЫҢ ТЫҒЫЗДЫҒЫ МЕН СТЕХИОМЕТРИЯЛЫҚ ҚҰРАМЫНА N2/Ar ГАЗ ШЫҒЫНЫНЫҢ ҚАТЫНАСЫ МЕН МАГНЕТРОННЫҢ ҚУАТЫНЫҢ ӘСЕРІ
ВЛИЯНИЕ ОТНОШЕНИЯ РАСХОДОВ ГАЗОВ N2/Ar И МОЩНОСТИ МАГНЕТРОНА НА ПЛОТНОСТЬ И СТЕХИОМЕТРИЧЕСКИЙ СОСТАВ ПЛЕНОК TINX, СИНТЕЗИРОВАННЫХ МЕТОДОМ МАГНЕТРОННОГО РАСПЫЛЕНИЯ
Keiinbay S. Nussupov K.Kh. Sultanov A.T. Tyschenko I.E. Eshanov A.Ph. Beisenkhanov N.B.
2024Kazakh-British Technical University
Herald of the Kazakh British Technical UNiversity
2024#21Issue 3302 - 313 pp.
The films of titanium nitride were deposited by direct current magnetron sputtering on the surface of single-crystalline silicon samples in an Ar-N2atmosphere for use as a diffusion barrier. The thickness and density of films were measured by X-ray reflectometry. The design of the MAGNA TM-200-01 installation has been changed to increase the supply of nitrogen into the chamber. The influences of sputtering conditions, including the flow rate of nitrogen and argon gases and their N2/Ar ratios in the range of 1–60 in the chamber, magnetron power of 690–1400 W on the formation of TiNxfilms, their density and stoichiometric composition, were studied. It is shown that the value of x is affected not only by the N2/Ar gas flow rate ratio, but also by the magnetron power. At the sputtering parameters 1200 W, N2/Ar = 30, 0.8 Pa, 320 s and 100°C, a maximum density of 5.247 g/cm3of a film was achieved, which corresponds to the composition TiN0.786= Ti56N44. The presence of nanocrystalline film of titanium nitride and the absence of a nanocrystalline titanium phase were confirmed by photographic X-ray diffraction. It was found that for the synthesis of titanium nitride as close as possible to the stoichiometric composition TiN0.770-TiN0.786, it is necessary to use magnetron power in the range of 900–1200 W, nitrogen rate of 30 cm3/min with low argon flows of 1–5 cm3/min.
diffusion barrier , magnetron sputtering , structure , thin films , titanium nitride
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Kazakh-British Technical University, Almaty, 050000, Kazakhstan
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Kazakh-British Technical University
Rzhanov Institute of Semiconductor Physics
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