Effects of 147 MeV Kr Ions on the Structural, Optical and Luminescent Properties of Gd3Ga5O12
Karipbayev Z.T. Aralbayeva G.M. Kumarbekov K.K. Kakimov A.B. Zhunusbekov A.M. Akilbekov A. Brik M.G. Konuhova M. Ubizskii S. Smortsova Y. Suchikova Y. Djurković S. Piskunov S. Popov A.I.
January 2026Multidisciplinary Digital Publishing Institute (MDPI)
Crystals
2026#16Issue 1
The optical and vibrational responses of Gd3Ga5O12 (GGG) single crystals to 147 MeV Kr-ion irradiations were systematically investigated to clarify defect formation pathways and their influence on luminescence mechanisms. Absorption spectra measured at room temperature reveal a stepwise redshift of the fundamental edge and the progressive development of a broad sub-band-gap tail between 4.4 and 5.3 eV, indicating the accumulation of F- and F+-type oxygen-vacancy centers and increasing structural disorder. Raman spectroscopy shows that, despite substantial track overlap at fluences up to 1014 ions/cm2, the crystal preserves its phonon frequencies and linewidths, while peak intensities decrease due to a growing disordered volume fraction. Low-temperature (13 K) photoluminescence demonstrates the persistence of a dominant broad band near 2.4 eV and the emergence of an additional irradiation-induced band at ~2.75 eV whose width increases with fluence, reflecting the formation of vacancy-related defect complexes. Excitation spectra transform from band-edge-dominated behavior in the pristine crystal to defect-tail-mediated excitation in heavily irradiated samples. These results provide a consistent spectroscopic picture of ion-track-induced disorder in GGG and identify the defect states governing its luminescence under extreme irradiation conditions.
defects , F centers , Gd3Ga5O12 single crystals , luminescence , Raman , scintillation materials
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Department of Technical Physics, Institute of Physics and Technology, L.N. Gumilyov, Eurasian National University, Kazhymukan St. 13, Astana, 010008, Kazakhstan
School of Integrated Circuits & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
Centre of Excellence for Photoconversion, Vinča Institute of Nuclear Sciences—National Institute of the Republic of Serbia, University of Belgrade, Belgrade, 11351, Serbia
Faculty of Science and Technology, Jan Długosz University, Częstochowa, 42200, Poland
Institute of Physics, University of Tartu, W. Ostwald Str. 1, Tartu, 50411, Estonia
Academy of Romanian Scientists, 3 Ilfov, Bucharest, 050044, Romania
Institute of Solid State Physics, University of Latvia, Kengaraga 8, Street, Riga, LV-1063, Latvia
Semiconductor Electronics Department, Lviv Polytechnic National University, S. Bandera Str. 12, Lviv, 79013, Ukraine
Deutsches Elektronen-Synchrotron (DESY), Hamburg, 22603, Germany
Scientific Department, Berdyansk State Pedagogical University, Zaporizhzhia, 69061, Ukraine
Department of Technical Physics
School of Integrated Circuits & CQUPT-BUL Innovation Institute
Centre of Excellence for Photoconversion
Faculty of Science and Technology
Institute of Physics
Academy of Romanian Scientists
Institute of Solid State Physics
Semiconductor Electronics Department
Deutsches Elektronen-Synchrotron (DESY)
Scientific Department
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