Optimizing Switching Behavior of Organic Electrochemical Transistors
Ilyassov B. Guerrero A. Zavgorodniy A. Aldasheva L. Yedilkhan D.
June 2025Engineered Science Publisher
Engineered Science
2025#35
Organic electrochemical transistors (OECTs) are pivotal in bioelectronics due to their ability to translate ionic signals into electronic ones. Their high transconductance, low-voltage operation, and compatibility with aqueous environments make them ideal for interfacing biological systems with electronics. However, the transient behavior of OECTs, particularly the effect of drain potential in switching kinetics, remains poorly understood. This study analyzes the influence of drain potential on the transient response of p-type accumulation mode OECTs. We observed significant current overshoot and slow relaxation times (> 60 sec) when the transistor switches from the depleted to doped regime, caused by drain potentials. These phenomena are attributed to over-depletion of the channel, which can impact the device’s reliability in practical applications. We propose an approach to reduce current overshoot and improve switching response with a current stabilization time of less than 10 seconds. Our findings offer valuable insights for optimizing the operation regime of OECTs, enhancing their switching speed, power efficiency, and reliability.
Electrochemical doping , Organic electrochemical transistors , Organic ionic-electronic conductors , Switching transient , Transistor switching response
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Astana IT University, Mangilik El avenue 55/11, Business center EXPO, block C1, Astana, 010000, Kazakhstan
INAM, University Jaume I, Castellon, 12071, Spain
Astana IT University
INAM
10 лет помогаем публиковать статьи Международный издатель
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