The effect of aluminium concentration on the resistance of Si3N4 to ion track formation
Ibrayeva A. OConnell J. Skuratov V. Janse van Vuuren A.
February 2024Elsevier Ltd
Vacuum
2024#220
The role of Al impurities on the structural response of polycrystalline silicon nitride to swift Xe and Bi ions at single ion track and overlapped ion track fluences is investigated. Si3N4 with Al impurity concentrations of 3 at.%, 1 at.% and 0.1. at.% were examined by means of high resolution scanning transmission electron microscopy. The threshold electronic energy loss (Set) required to form amorphous tracks was found to decrease with increasing Al fraction from above 33 keV/nm (0.1 at.% Al) to below 22 keV/nm for specimens containing about 3 at.% Al. All specimens were partially amorphized at overlapping ion fluence and the amorphous fraction monotonically increased with increasing Al content at the same ion fluence.
Al impurity , Amorphization , Scanning transmission electron microscopy , Si3N4 , Swift heavy ions , Tracks
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Institute of Nuclear Physics, Nur-Sultan, Ibragimov St. 1, Almaty, 050032, Kazakhstan
Center for High Resolution Transmission Electron Microscopy, Nelson Mandela University, Building 124, Summerstrand, Port Elizabeth, 6031, South Africa
Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Reactions, Joliot-Curie St. 6, Moscow Region, Dubna, 141980, Russian Federation
National Research Nuclear University MEPhI, Kashirskoe Shosse, 31, Moscow, 115409, Russian Federation
Dubna State University, Universitetskaya St., 19, Dubna, 141982, Russian Federation
Institute of Nuclear Physics
Center for High Resolution Transmission Electron Microscopy
Flerov Laboratory of Nuclear Reactions
National Research Nuclear University MEPhI
Dubna State University
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