Annealing of Irradiation Defects in Si3N4: TEM Examination
Ibrayeva A. O’Connell J. van Vuuren A.J. Skuratov V.
2025L.N. Gumilyov Eurasian National University
Eurasian Journal of Physics and Functional Materials
2025#9Issue 111 - 15 pp.
The article presents the first results of the study of structural and morphological features of swift (220 MeV) xenon ion induced defects in polycrystalline Si3N4 during post-irradiation heat treatment. The approximate temperature range of ion track region recrystallization is defined as 300e800 ∘C, at 800 ∘C complete structural relaxation was observed in the in-situ and ex-situ modes. It was found that the track recovery process, as expected, depends on the grain size and thickness of the sample. For complete recrystallization in both studied modes, a short annealing time was required due to the nature of the initial defects (before heating). 2616-8537/
Annealing , High-resolution transmission electron microscopy , Ion tracks , Radiation defects , Recrystallization , Swift heavy ions
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Institute of Nuclear Physics, Almaty, 050032, Kazakhstan
KIMEP University, Almaty, 050010, Kazakhstan
Center for High Resolution Transmission Electron Microscopy, Port Elizabeth, 6001, South Africa
Flerov Laboratory of Nuclear Reactions, JINR, Dubna, 141980, Russian Federation
National Research Nuclear University MEPhI, Moscow, 115409, Russian Federation
Dubna State University, Dubna, 140090, Russian Federation
Institute of Nuclear Physics
KIMEP University
Center for High Resolution Transmission Electron Microscopy
Flerov Laboratory of Nuclear Reactions
National Research Nuclear University MEPhI
Dubna State University
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