The performance of LaAlOx gate dielectric films prepared by sol-gel method at different temperatures of annealing


Huang Z. Tuokedaerhan K. Yang L. Guo C. Cai Z. Ibraimov M. Sailanbek S.
February 2026Springer

Journal of Sol-Gel Science and Technology
2026#117Issue 2

In recent years, there has been growing interest in exploring rare earth oxides as potential high-k gate dielectrics. Al-doped La2O3 (LaAlOx) thin films annealed at different temperatures were fabricated on n-type Si substrates via the sol-gel method, a simple and low-cost approach, and the temperature-dependent performance of LaAlOx as gate dielectrics was systematically investigated through root-mean-square roughness, interfacial characteristics, and electrical properties analyses. LaAlOx thin films remain amorphous in the 500–800 °C range. Films annealed at 700 °C show the lowest root-mean-square roughness of 0.320 nm. XPS analysis indicates that this temperature promotes optimal M-O bond formation and minimizes M-OH bonds, producing the highest film quality. Furthermore, the electrical properties of the Al/ LaAlOx /Si/Al metal-oxide-semiconductor (MOS) capacitors were analyzed. The results show that the samples after annealing at 700 °C have good electrical properties, with a high dielectric constant and a low leakage current density at 1 V gate voltage.

La2O3·sol-gel method·gate dielectric thin films·MOS capacitors

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Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Xinjiang, Urumqi, 830046, China
School of Physics Science and Technology, Xinjiang University, Xinjiang, Urumqi, 830046, China
Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University, Almaty, 050040, Kazakhstan

Xinjiang Key Laboratory of Solid State Physics and Devices
School of Physics Science and Technology
Department of Solid State Physics and Nonlinear Physics

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