Interfacial optimization and enhancement of electrical properties of Ti-doped ZrO2 gate dielectric films prepared by the sol-gel method
Guo C. Tuokedaerhan K. Huang Z. Cai Z. Ibraimov M. Sailanbek S.
1 April 2025Elsevier Ltd
Solid State Communications
2025#398
As the conventional gate dielectric material SiO2 is no longer sufficient for metal-oxide-semiconductor (MOS) electronic devices, the replacement of SiO2 with high-k material ZrO2 has proven to be an effective strategy for further reducing device feature size. In this study, we optimized the crystallization temperature, dielectric constant, and interfacial quality of ZrO2 thin films by exploring the appropriate Ti doping concentration. This approach addresses the issue of large leakage current in MOS capacitor applications. To easily adjust the Ti content and reduce the cost, ZrTiOx thin films with varying Ti concentrations were deposited on Si substrates using a sol-gel method. The effects of different Ti doping concentrations on the structural, optical, interfacial chemical, and electrical properties of the ZrTiOx films were systematically evaluated using various characterization techniques. The results indicate that the ZTO-12 sample exhibits an excellent dielectric constant (36.5), a large conduction band offset (2.86 eV), a small hysteresis (0.05 V), and a low leakage current density (9.2×10−5A/cm2). Additionally, the leakage current conduction mechanism of the Al/ ZrTiOx/Si capacitor was analyzed, which mainly includes ohmic conduction, Schottky emission, and Poole-Frenkel emission. In summary, the optimal Ti doping concentration is 12 %, at which point the ZrTiOx films exhibit excellent integrated properties. These findings will provide new insights for enhancing the performance of high-k materials in MOS electronic devices.
High-k material , Leakage-current mechanism , MOS capacitors , Sol-gel method , ZrTiOx thin films
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Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Xinjiang, Urumqi, 830046, China
The School of Physics Science and Technology, Xinjiang University, Xinjiang, Urumqi, 830046, China
Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University, Almaty, 050040, Kazakhstan
Xinjiang Key Laboratory of Solid State Physics and Devices
The School of Physics Science and Technology
Department of Solid State Physics and Nonlinear Physics
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