Graphene-carbon nitride interface-geometry effects on thermal rectification: A molecular dynamics simulation
Farzadian O. Spitas C. Kostas K.V.
21 May 2021IOP Publishing Ltd
Nanotechnology
2021#32Issue 21
In this paper we expand our previous study on phonon thermal rectification (TR) exhibited in a hybrid graphene-carbon nitride system (G−C3N) to investigate the systems behavior under a wider range of temperature differences, between the two employed baths, and the effects of media-interface geometry on the rectification factor. Our simulation results reveal a sigmoid relation between TR and temperature difference, with a sample-size depending upper asymptote occurring at generally large temperature differences. The achieved TR values are significant and go up to around 120% for ΔT = 150 K. Furthermore, the consideration of varying media-interface geometries yields a non-negligible effect on TR and highlights areas for further investigation. Finally, calculations of Kapitza resistance at the G-C3N interface are performed for assisting us in the understanding of interface-geometry effects on TR.
Graphene-C3N interface , Molecular dynamics , Thermal rectification
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Mechanical and Aerospace Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Nur-Sultan, 010000, Kazakhstan
Mechanical and Aerospace Engineering
10 лет помогаем публиковать статьи Международный издатель
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