Annealing of Oxygen-Related Frenkel Defects in Corundum Single Crystals Irradiated with Energetic Xenon Ions

Eugene K.A. Assylbayev R. Baubekova G. Kudryavtseva I. Kuzovkov V.N. Podelinska A. Seeman V. Shablonin E. Lushchik A.
June 2025 Multidisciplinary Digital Publishing Institute (MDPI)

Crystals
2025 #15 Issue 6

The recovery of radiation damage induced by 231-MeV xenon ions with varying fluence (from 5 × 10¹¹ to 2 × 10¹⁴ cm⁻²) in α-Al₂O₃ (corundum) single crystals has been studied by means of isochronal thermal annealing of radiation-induced optical absorption (RIOA). The integral of elementary Gaussians (product of RIOA spectrum decomposition) OK has been considered as a concentration measure of relevant oxygen-related Frenkel defects (neutral and charged interstitial-vacancy pairs, F-H, F⁺-H⁻). The annealing kinetics of these four ion-induced point lattice defects has been modelled in terms of diffusion-controlled bimolecular recombination reactions and compared with those carried out earlier for the case of corundum irradiation by fast neutrons. The changes in the parameters of interstitial (mobile component in the recombination process) annealing kinetics—activation energy E and pre-exponential factor X—in ion-irradiated crystals are considered.

Al₂O₃ , diffusion-controlled annealing , Frenkel defects , radiation , radiation-induced absorption , swift heavy ions

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Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga, LV-1063, Latvia
High School of Natural Sciences, Margulan University, Toraigyrov Str. 58, Pavlodar, 140000, Kazakhstan
Department of Technical Physics, L.N. Gumilyov Eurasian National University, Munaitpasov Str. 13, Astana, 010008, Kazakhstan
Institute of Physics, University of Tartu, W. Ostwald Str. 1, Tartu, 50411, Estonia

Institute of Solid State Physics
High School of Natural Sciences
Department of Technical Physics
Institute of Physics

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