Development of Memory Elements based on Surface-Modified Nanostructured Porous Silicon
Duisebayev T. Ibraimov M. Khaniyev B. Tileu A. Alimbetova D.
2024World Scientific and Engineering Academy and Society
WSEAS Transactions on Electronics
2024#1563 - 69 pp.
Due to advancements in memory technology, nanostructured semiconductor-based memristors are attracting increasing attention. This article presents the results of a study on memristors based on modified porous structures made from silicon. The memristive properties of nanostructured porous silicon (por-Si) and metal-oxide layers were investigated. The memristors based on por-Si were fabricated using electrochemical etching. The study shows that after 3 minutes, the por-Si film exhibited reversible properties, indicating that memristive behavior was observed in the porous silicon nanofilms. Metal-oxide semiconductor, such as CuO, was deposited on the por-Si surface using magnetron sputtering. The morphology of the por-Si and heterostructure was analyzed using scanning electron microscopy. The influence of light illumination on the memristor properties of films was also observed, with an increase in the hysteresis area dependent on the illumination process.
electrical characteristics , hysteresis , magnetron sputtering , memory elements , memristor , nanofilm , porous silicon , surface modification
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Department of Solid State Physics and Nonlinear Physics, Al-Farabi Kazakh National University, 71 Al-Farabi Avenue, Almaty, Kazakhstan
Department of Solid State Physics and Nonlinear Physics
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