Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors
Du H. Tuokedaerhan K. Zhang R. Ibraimov M. Sagidolda Y.
2024Institute of Electrical and Electronics Engineers Inc.
IEEE Transactions on Electron Devices
2024#71Issue 127557 - 7562 pp.
In this study, we prepared Dy-doped indium oxide (In2O3) thin-film transistors (TFTs) using a solution-based method. We conducted a comprehensive investigation into the effects of Dy doping concentration on the structure, surface morphology, optical properties, and energy band structure of In2O3 thin films. Additionally, we explored the relationship between the electrical characteristics of the TFTs and the Dy doping concentration. Our findings include achieving a high mobility of 11.35 cm2/V·s, a threshold voltage of 2.07 V, a current switching ratio of 1.89 × 105, and a low subthreshold swing (SS) of 0.49 V/dec. These results indicate that appropriate Dy doping can enhance the crystallization temperature and band gap of In2O3 films. X-ray photoelectron spectroscopy (XPS) and electrical characterization results demonstrate that Dy acts as a carrier suppressor, effectively reducing the carrier concentration and passivating oxygen vacancy defects in the active/insulating layer channel and the interface trap state density. This also causes a positive shift in the threshold voltage. Therefore, DyInO TFTs show great potential for application in transparent electronics and flat-panel displays in the future.
DyInO , indium oxide (In2O3) , solution method , thin-film transistors (TFTs)
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The School of Physics Science and Technology, Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Ürümqi, 830046, China
The Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University, Almaty, 050040, Kazakhstan
The School of Physics Science and Technology
The Department of Solid State Physics and Nonlinear Physics
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