Influence of Nanocrystalline Silicon Conductivity on the Structural and Optical Properties of Porous Silicon
Dikhanbayev K. Zharekeshev I. Zhambyl A. Sagidolda Y. Baspakova Z. Khaniyev B. Meirambekuly N. Kozhagulov Y. Zhumatova S.
2024Engineered Science Publisher
ES Materials and Manufacturing
2024#26
Silicon substrates with p-n junction were layer-by-layer etched along the depth of the n-layer by the method of electrochemical anodization on the surface; the obtained porous silicon films were analyzed by means of voltammetric response, reflection spectra, and photoluminescence spectra as a function of the conductivity of the gradient layer along the depth of the p-n junction. It is shown that current flow across the thin-film layer, in particular, with the increase of the layer resistance along the etching depth, there appears a region of space charge associated with the depletion of charge in the vicinity of the p-n junction and an increase in the forward current-voltage characteristics, after which current rectification begins.
Electrochemical etching , Excited hole , Nanostructures , Photoluminescence , Photon , Porous silicon films
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Al-Farabi Kazakh National University, Al-Farabi ave. 71, Almaty, 050040, Kazakhstan
Al-Farabi Kazakh National University
10 лет помогаем публиковать статьи Международный издатель
Книга Публикация научной статьи Волощук 2026 Book Publication of a scientific article 2026